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| 2SA1190, 2SA1191 Silicon PNP Epitaxial Application * Low frequency low noise amplifier * Complementary pair with 2SC2855 and 2SC2856 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1190, 2SA1191 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1190 -90 -90 -5 -100 100 400 150 -55 to +150 2SA1191 -120 -120 -5 -100 100 400 150 -55 to +150 Unit V V V mA mA mW C C 2 2SA1190, 2SA1191 Electrical Characteristics (Ta = 25C) 2SA1190 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 2SA1191 Max -- -- -- -0.1 -0.1 800 Min Typ Max -- -- -- -0.1 -0.1 800 Unit V V V A A Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -70 V, IE = 0 VEB = -2 V, IC = 0 VCE = -12 V, I C = -2 mA*2 I C = -10 mA, I B = -1 mA*2 Min -90 -90 -5 -- -- 250 -- -- -- -- -- Typ -- -- -- -- -- -- -120 -- -120 -- -5 -- -- 250 -- -- -- -- VCE(sat) VBE(sat) -0.05 -0.15 -- -0.7 130 3.2 0.15 -1.0 -- -- 1.5 -- -- -- -- -0.05 -0.15 V -0.7 130 3.2 0.15 -1.0 -- -- 1.5 V MHz pF dB Gain bandwidth product f T Collector output capacitance Noise figure Cob NF VCE = -6 V, I C = -10 mA VCB = -10 V, IE = 0, f = 1 MHz VCE = -6 V, I C = -0.1 mA, Rg = 10 k f = 1 kHz VCE = -6 V, I C = -0.1 mA, Rg = 10 k f = 10 Hz VCB = -6 V, I C = -10 mA, Rg = 0, f = 1 kHz -- 0.2 2.0 -- 0.2 2.0 dB Noise voltage reffered to input en -- 0.7 -- -- 0.7 -- nV/ Hz Notes: 1. The 2SA1190 and 2SA1191 are grouped by h FE as follows. 2. Pulse test D 250 to 500 E 400 to 800 3 2SA1190, 2SA1191 Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 600 Collector Current IC (mA) Typical Output Characteristics (1) -20 -3 0 -16 PC -2 mW 00 =4 5 -20 400 -12 -15 -8 -10 -5 A 200 -4 IB = 0 0 50 100 150 Ambient Temperature Ta (C) 0 -20 -40 -60 -80 -100 Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) -10 Collector Current IC (mA) Typical Transfer Characteristics -100 Collector Current IC (mA) VCE = -6 V Pulse -10 -20 -8 -18 -16 -14 -12 -10 -6 Ta = 75C 25 -25 -4 -8 -6 -1.0 -2 -4 -2 A IB = 0 0 -4 -8 -12 -16 -20 Collector to Emitter Voltage VCE (V) -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 Base to Emitter Voltage VBE (V) 4 2SA1190, 2SA1191 Collector Cutoff Current vs. Collector to Base Voltage -10.000 Collector cutoff current ICBO (pA) IE = 0 -1,000 Ta = 75C 25 -25 -10 Collector cutoff current ICEO (nA) -1,000 RBE = -100 Ta = 75C 25 -10 -25 -1.0 Collector Cutoff Current vs. Collector to Emitter Voltage -100 -1 0 -20 -40 -60 -80 -100 Collector to Base Voltage VCB (V) -0.1 0 -20 -40 -60 -80 -100 Collector to Emitter Voltage VCE (V) Emitter Cutoff Current vs. Emitter to Base Voltage IC = 0 Ta = 75C -100 Collector to emitter breakdown voltage V(BR) CER (V) -1,000 Emitter cutoff current IEBO (pA) Collector to Emitter Breakdown Voltage vs. Base to Emitter Resistance -190 Typical Value IC = -1 mA -180 -170 -10 25 -1.0 -25 -160 -150 -0.1 0 -2 -4 -6 -8 -10 Emitter to Base Voltage VEB (V) -140 10 100 1k 10 k 100 k Base to Emitter Resistance RBE () 5 2SA1190, 2SA1191 DC Current Transfer Ratio vs. Collector Current Collector to emitter saturation voltage VCE (sat) (V) 1,000 Ta = 75C DC current transfer ratio hFE 300 -25 -1.0 IC = 10 IB Pulse -0.3 Collector to Emitter Saturation Voltage vs. Collector Current 25 100 -0.1 Ta = 75C -25 30 VCE = -12 V Pulse 10 -1 -3 -10 -30 Collector Current IC (mA) -100 -0.03 25 -0.01 -1 -3 -10 -30 Collector Current IC (mA) -100 Base to Emitter Saturation Voltage vs. Collector Current -10 Base to emitter saturation voltage VBE (sat) (V) Gain bandwidth product fT (MHz) IC = 10 IB Pulse -3 25 1,000 Gain Bandwidth Product vs. Collector Current VCE = -6 V 500 200 100 50 -1.0 Ta = -25C 75 -0.3 20 10 -0.5 -1.0 -2 -5 -10 -20 Collector Current IC (mA) -0.1 -1 -3 -10 -30 Collector Current IC (mA) -100 -50 6 2SA1190, 2SA1191 Noise voltage reffered to input en (nV/Hz) Collector Output Capacitance vs. Collector to Base Voltage Collector output capacitance Cob (pF) 100 f = 1 MHz IE = 0 30 Noise Voltage Reffered to Input vs. Collector Current 10 VCE = -6 V Rg = 0 f = 1 kHz 3 10 1.0 3 0.3 1 -1 -3 -10 -30 -100 Collector to Base Voltage VCB (V) 0.1 -0.1 -0.3 -1.0 -3 Collector Current IC (mA) -10 Noise voltage reffered to input en (nV/Hz) Noise voltage reffered to input en (nV/Hz) Noise Voltage Reffered to Input vs. Signal Source Resistance 1,000 VCE = -6 V f = 1 kHz 100 IC = -10 mA 10 -1 -0.1 1.0 Noise Voltage Reffered to Input vs. Collector to Emitter Voltage 1.0 0.9 0.8 0.7 0.6 IC = -1 mA Rg = 0 f = 1 kHz -3 -10 -30 -100 Collector to Emitter Voltage VCE (V) 0.1 10 100 1k 10 k 100 k Signal Source Resistance Rg () 0.5 -1 7 2SA1190, 2SA1191 Noise voltage reffered to input en (nV/Hz) Noise Voltage Reffered to Input vs. Frequency 2.0 VCE = -6 V Rg = 0 1.6 1.2 IC = -1 mA -10 0.4 0.8 0 10 100 1k 10 k Frequency f (Hz) 100 k 8 Unit: mm 4.8 0.3 3.8 0.3 2.3 Max 0.5 0.1 0.7 0.60 Max 12.7 Min 5.0 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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